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Photoconductive properties of Bi2S3nanowires

2015

The photoconductive properties of Bi2S3 nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1–4 μW·cm−2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi2S3 nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi2S3 nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi2S3 nanowires, when compared to liberated from the AAO membrane…

Materials sciencePhotoconductivityPHOTODETECTORSThin filmsPhotoconductivity spectrumAluminaNanowireGeneral Physics and AstronomyNanotechnologySemiconductor growth02 engineering and technology010402 general chemistryNanofabrication01 natural sciencesSemiconductor materialsTHIN-FILMSThin filmONE-DIMENSIONAL NANOSTRUCTURESArraysPhotocurrentOne-dimensional nanostructuresMembranesNanowire surfaceNanowiresbusiness.industryAnodizingPhotoconductivityPhotodetectors021001 nanoscience & nanotechnologyCharge carrier trappingARRAYS0104 chemical sciencesMembraneNanolithographyIllumination intensityAnodized aluminaPhotoconductive propertiesSemiconductor quantum wiresOptoelectronicsAlumina membranesCharge carrierElectron trapsPhoton energy0210 nano-technologybusinessBismuth compoundsJournal of Applied Physics
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